BU1006A-E3/51 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Average Rectified (Io): 3 A
Voltage - Peak Reverse (Max): 600 V
Supplier Device Package: isoCINK+™ BU
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-SIP, BU
Packaging: Bulk
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Технічний опис BU1006A-E3/51 Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1P 600V 3A BU, Current - Reverse Leakage @ Vr: 10 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A, Current - Average Rectified (Io): 3 A, Voltage - Peak Reverse (Max): 600 V, Supplier Device Package: isoCINK+™ BU, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-SIP, BU, Packaging: Bulk.
Інші пропозиції BU1006A-E3/51
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BU1006A-E3/51 | Виробник : Vishay General Semiconductor |
Bridge Rectifiers 10 Amp 600 Volt |
товару немає в наявності |