BUK6217-55C,118

BUK6217-55C,118 Nexperia USA Inc.


BUK6217-55C.pdf Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 44A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
на замовлення 2888 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1154+18.73 грн
Мінімальне замовлення: 1154
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Технічний опис BUK6217-55C,118 Nexperia USA Inc.

Description: MOSFET N-CH 55V 44A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 44A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V, Power Dissipation (Max): 80W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: DPAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V.

Інші пропозиції BUK6217-55C,118

Фото Назва Виробник Інформація Доступність
Ціна без ПДВ
BUK6217-55C,118 BUK6217-55C,118 Виробник : Nexperia USA Inc. BUK6217-55C.pdf Description: MOSFET N-CH 55V 44A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
товар відсутній
BUK6217-55C,118 BUK6217-55C,118 Виробник : Nexperia USA Inc. BUK6217-55C.pdf Description: MOSFET N-CH 55V 44A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 44A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 12A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1950 pF @ 25 V
товар відсутній
BUK6217-55C,118 BUK6217-55C,118 Виробник : Nexperia BUK6217-55C-1598739.pdf MOSFET N-CHAN 55V 44A
товар відсутній