BUK625R2-30C,118 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 30V 90A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 36466 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 888+ | 22.56 грн |
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Технічний опис BUK625R2-30C,118 Nexperia USA Inc.
Description: MOSFET N-CH 30V 90A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V, Power Dissipation (Max): 128W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: DPAK, Grade: Automotive, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK625R2-30C,118
| Фото | Назва | Виробник | Інформація |
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BUK625R2-30C,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 90A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V Qualification: AEC-Q101 |
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BUK625R2-30C,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 90A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 5.2mOhm @ 15A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: DPAK Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 54.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3470 pF @ 25 V Qualification: AEC-Q101 |
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BUK625R2-30C,118 | Виробник : Nexperia |
MOSFET N-Chan 30V 90A |
товар відсутній |