BUK652R7-30C,127 NXP USA Inc.
Виробник: NXP USA Inc.Description: MOSFET N-CH 30V 100A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V
Power Dissipation (Max): 204W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: TO-220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4008 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 342+ | 66.13 грн |
Відгуки про товар
Написати відгук
Технічний опис BUK652R7-30C,127 NXP USA Inc.
Description: MOSFET N-CH 30V 100A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V, Power Dissipation (Max): 204W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: TO-220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK652R7-30C,127
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
|
BUK652R7-30C,127 | Виробник : NXP USA Inc. |
Description: MOSFET N-CH 30V 100A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 25A, 10V Power Dissipation (Max): 204W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: TO-220AB Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6960 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
|
 |
BUK652R7-30C,127 | Виробник : Nexperia |
MOSFET N-CHAN 30V 100A |
товару немає в наявності |
|
| BUK652R7-30C,127 | Виробник : NXP Semiconductors |
NXP Semiconductors |
товару немає в наявності |