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| 10+ | 144.32 грн |
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Технічний опис BUK6607-55C,118 Nexperia
Description: MOSFET N-CH 55V 100A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V, Power Dissipation (Max): 158W (Tc), Vgs(th) (Max) @ Id: 2.8V @ 1mA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK6607-55C,118
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BUK6607-55C,118 | Виробник : NEXPERIA |
 BUK6607-55C.118 SMD N channel transistors |
товару немає в наявності |
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BUK6607-55C,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 100A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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BUK6607-55C,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 55V 100A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 25A, 10V Power Dissipation (Max): 158W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 82 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |