BUK6D210-60EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 60V 2.1A/5.7A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 5.7A (Tc)
Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V
Power Dissipation (Max): 2W (Ta), 15W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: DFN2020MD-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V
Qualification: AEC-Q101
на замовлення 15000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 3000+ | 7.1 грн |
| 6000+ | 6.55 грн |
| 9000+ | 5.9 грн |
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Технічний опис BUK6D210-60EX Nexperia USA Inc.
Description: MOSFET N-CH 60V 2.1A/5.7A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 5.7A (Tc), Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V, Power Dissipation (Max): 2W (Ta), 15W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: DFN2020MD-6, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V, Qualification: AEC-Q101.
Інші пропозиції BUK6D210-60EX за ціною від 5.58 грн до 28.83 грн
| Фото | Назва | Виробник | Інформація |
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BUK6D210-60EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 2.1A/5.7A 6DFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.1A (Ta), 5.7A (Tc) Rds On (Max) @ Id, Vgs: 210mOhm @ 2.1A, 10V Power Dissipation (Max): 2W (Ta), 15W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: DFN2020MD-6 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 3.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 16464 шт: термін постачання 21-31 дні (днів) |
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BUK6D210-60EX | Виробник : Nexperia |
MOSFET BUK6D210-60E/SOT1220/SOT1220 |
на замовлення 25753 шт: термін постачання 21-30 дні (днів) |
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BUK6D210-60EX | Виробник : NEXPERIA |
60 V, N-channel Trench MOSFET |
товар відсутній |
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BUK6D210-60EX | Виробник : Nexperia |
60 V, N-channel Trench MOSFET Automotive AEC-Q101 |
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| BUK6D210-60EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 23A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 23A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 456mΩ Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK6D210-60EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4.1A; Idm: 23A; 15W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4.1A Pulsed drain current: 23A Power dissipation: 15W Case: DFN6; SOT1220 Gate-source voltage: ±20V On-state resistance: 456mΩ Mounting: SMD Gate charge: 3.8nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |