BUK6D38-30EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 30V 5.5A/17A 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V
Power Dissipation (Max): 2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: DFN2020MD-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 2750 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 35.44 грн |
| 13+ | 24.44 грн |
| 100+ | 16.37 грн |
| 500+ | 12.28 грн |
| 1000+ | 10.56 грн |
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Технічний опис BUK6D38-30EX Nexperia USA Inc.
Description: MOSFET N-CH 30V 5.5A/17A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V, Power Dissipation (Max): 2W (Ta), 19W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: DFN2020MD-6, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK6D38-30EX за ціною від 8.23 грн до 37.42 грн
| Фото | Назва | Виробник | Інформація |
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BUK6D38-30EX | Виробник : Nexperia |
MOSFETs SOT1220 N-CH 30V 5.5A |
на замовлення 3000 шт: термін постачання 21-30 дні (днів) |
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BUK6D38-30EX | Виробник : NEXPERIA |
30 V, N-channel Trench MOSFET |
товару немає в наявності |
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BUK6D38-30EX | Виробник : Nexperia |
30 V, N-channel Trench MOSFET Automotive AEC-Q101 |
товару немає в наявності |
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BUK6D38-30EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 5.5A/17A 6DFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Ta), 17A (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.5A, 10V Power Dissipation (Max): 2W (Ta), 19W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: DFN2020MD-6 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| BUK6D38-30EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12A; Idm: 68A; 19W Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Kind of channel: enhancement Gate charge: 8nC Case: DFN6; SOT1220 On-state resistance: 65mΩ Application: automotive industry Drain current: 12A Pulsed drain current: 68A Power dissipation: 19W Gate-source voltage: ±20V Drain-source voltage: 30V |
товару немає в наявності |