BUK6Y10-30PX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET P-CH 30V 80A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 110W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 33.76 грн |
Відгуки про товар
Написати відгук
Технічний опис BUK6Y10-30PX Nexperia USA Inc.
Description: MOSFET P-CH 30V 80A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V, Power Dissipation (Max): 110W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції BUK6Y10-30PX за ціною від 29.97 грн до 84.68 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BUK6Y10-30PX | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 80A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Ta) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Power Dissipation (Max): 110W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2360 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 2719 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||||||
 |
BUK6Y10-30PX | Виробник : Nexperia |
MOSFET BUK6Y10-30P/SOT669/LFPAK |
на замовлення 4126 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||||
 |
BUK6Y10-30PX | Виробник : NEXPERIA |
Trans MOSFET P-CH 30V 80A Automotive 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
|||||||||||||||||
| BUK6Y10-30PX | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -57A; Idm: -320A; 110W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -57A Pulsed drain current: -320A Power dissipation: 110W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
||||||||||||||||||
| BUK6Y10-30PX | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -57A; Idm: -320A; 110W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -57A Pulsed drain current: -320A Power dissipation: 110W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 25mΩ Mounting: SMD Gate charge: 64nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |