BUK6Y14-40PX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис BUK6Y14-40PX Nexperia USA Inc.
Description: MOSFET P-CH 40V 64A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK6Y14-40PX за ціною від 29.40 грн до 136.68 грн
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BUK6Y14-40PX | Nexperia |
MOSFETs SOT669 P-CH 40V 64A |
на замовлення 5030 шт: термін постачання 21-30 дні (днів) |
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BUK6Y14-40PX | Nexperia USA Inc. |
Description: MOSFET P-CH 40V 64A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BUK6Y14-40PX | NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W Type of transistor: P-MOSFET Mounting: SMD Pulsed drain current: -257A Drain current: -46A Drain-source voltage: -40V Gate charge: 64nC On-state resistance: 25mΩ Power dissipation: 110W Gate-source voltage: ±20V Kind of package: reel; tape Application: automotive industry Polarisation: unipolar Kind of channel: enhancement Case: LFPAK56; PowerSO8; SOT669 |
на замовлення 65 шт: термін постачання 14-30 дні (днів) |
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| BUK6Y14-40PX |
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Виробник: Nexperia
MOSFETs SOT669 P-CH 40V 64A
MOSFETs SOT669 P-CH 40V 64A
на замовлення 5030 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 120.57 грн |
| 10+ | 75.97 грн |
| 100+ | 43.99 грн |
| 500+ | 34.70 грн |
| 1000+ | 32.89 грн |
| 1500+ | 29.40 грн |
| BUK6Y14-40PX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 40V 64A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 10.8A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 122.55 грн |
| 10+ | 75.19 грн |
| 100+ | 50.40 грн |
| 500+ | 37.31 грн |
| BUK6Y14-40PX |
|
Виробник: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W
Type of transistor: P-MOSFET
Mounting: SMD
Pulsed drain current: -257A
Drain current: -46A
Drain-source voltage: -40V
Gate charge: 64nC
On-state resistance: 25mΩ
Power dissipation: 110W
Gate-source voltage: ±20V
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -46A; Idm: -257A; 110W
Type of transistor: P-MOSFET
Mounting: SMD
Pulsed drain current: -257A
Drain current: -46A
Drain-source voltage: -40V
Gate charge: 64nC
On-state resistance: 25mΩ
Power dissipation: 110W
Gate-source voltage: ±20V
Kind of package: reel; tape
Application: automotive industry
Polarisation: unipolar
Kind of channel: enhancement
Case: LFPAK56; PowerSO8; SOT669
на замовлення 65 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 136.68 грн |
| 10+ | 101.70 грн |