BUK6Y19-30PX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 12000 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
1500+ | 26.39 грн |
3000+ | 23.92 грн |
7500+ | 22.78 грн |
10500+ | 20.4 грн |
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Технічний опис BUK6Y19-30PX Nexperia USA Inc.
Description: MOSFET P-CH 30V 45A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: LFPAK56, Power-SO8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK6Y19-30PX за ціною від 29.28 грн до 59.79 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||
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BUK6Y19-30PX | Виробник : Nexperia USA Inc. |
Description: MOSFET P-CH 30V 45A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V Power Dissipation (Max): 66W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V Qualification: AEC-Q101 |
на замовлення 13380 шт: термін постачання 21-31 дні (днів) |
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BUK6Y19-30PX | Виробник : Nexperia | MOSFET BUK6Y19-30PX |
на замовлення 3892 шт: термін постачання 21-30 дні (днів) |
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BUK6Y19-30PX | Виробник : Nexperia | Trans MOSFET P-CH 30V 45A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
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BUK6Y19-30PX | Виробник : Nexperia | Trans MOSFET P-CH 30V 45A Automotive AEC-Q101 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
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BUK6Y19-30PX | Виробник : NEXPERIA | Trans MOSFET P-CH 30V 45A Automotive 5-Pin(4+Tab) LFPAK T/R |
товар відсутній |
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BUK6Y19-30PX | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -32A; Idm: -181A; 66W Mounting: SMD Application: automotive industry Kind of package: reel; tape Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -181A Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: -30V Drain current: -32A On-state resistance: 50mΩ Type of transistor: P-MOSFET Power dissipation: 66W Polarisation: unipolar кількість в упаковці: 1 шт |
товар відсутній |
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BUK6Y19-30PX | Виробник : NEXPERIA |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -32A; Idm: -181A; 66W Mounting: SMD Application: automotive industry Kind of package: reel; tape Gate charge: 35nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -181A Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: -30V Drain current: -32A On-state resistance: 50mΩ Type of transistor: P-MOSFET Power dissipation: 66W Polarisation: unipolar |
товар відсутній |