BUK6Y19-30PX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 45A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Power Dissipation (Max): 66W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 1500+ | 29.64 грн |
| 3000+ | 25.38 грн |
| 4500+ | 25.12 грн |
| 7500+ | 23.45 грн |
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Технічний опис BUK6Y19-30PX Nexperia USA Inc.
Description: MOSFET P-CH 30V 45A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 45A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V, Power Dissipation (Max): 66W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V, Qualification: AEC-Q101.
Інші пропозиції BUK6Y19-30PX за ціною від 20.74 грн до 109.19 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BUK6Y19-30PX | Nexperia |
MOSFETs SOT669 P-CH 30V 45A |
на замовлення 2051 шт: термін постачання 21-30 дні (днів) |
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BUK6Y19-30PX | Nexperia USA Inc. |
Description: MOSFET P-CH 30V 45A LFPAK56 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 66W (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
на замовлення 9063 шт: термін постачання 21-31 дні (днів) |
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| BUK6Y19-30PX |
|
Виробник: Nexperia
MOSFETs SOT669 P-CH 30V 45A
MOSFETs SOT669 P-CH 30V 45A
на замовлення 2051 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 89.61 грн |
| 10+ | 57.09 грн |
| 100+ | 35.40 грн |
| 500+ | 28.28 грн |
| 1000+ | 25.98 грн |
| 1500+ | 21.58 грн |
| 3000+ | 20.74 грн |
| BUK6Y19-30PX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET P-CH 30V 45A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 45A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 66W (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
на замовлення 9063 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 109.19 грн |
| 10+ | 66.27 грн |
| 100+ | 44.04 грн |
| 500+ | 32.37 грн |