| Кількість | Ціна |
|---|---|
| 3+ | 125.64 грн |
| 10+ | 111.14 грн |
| 100+ | 75.25 грн |
| 500+ | 62.20 грн |
| 1000+ | 49.08 грн |
| 2500+ | 45.77 грн |
| 5000+ | 43.49 грн |
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Технічний опис BUK7219-55A,118 Nexperia
Description: MOSFET N-CH 55V 55A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: DPAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Input Capacitance (Ciss) (Max) @ Vds: 2108 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK7219-55A,118 за ціною від 133.48 грн до 133.48 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BUK7219-55A,118 | Nexperia USA Inc. |
 Description: MOSFET N-CH 55V 55A DPAKPackaging: Bulk Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: DPAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Input Capacitance (Ciss) (Max) @ Vds: 2108 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 9246 шт: термін постачання 21-31 дні (днів) |
|
| BUK7219-55A,118 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2108 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Bulk
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 19mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2108 pF @ 25 V
Qualification: AEC-Q101
на замовлення 9246 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 151+ | 133.48 грн |