BUK7510-55AL,127 NXP Semiconductors
| Кількість | Ціна без ПДВ |
|---|---|
| 181+ | 195.65 грн |
| 500+ | 186.22 грн |
| 1000+ | 175.62 грн |
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Технічний опис BUK7510-55AL,127 NXP Semiconductors
Description: MOSFET N-CH 55V 75A TO220AB, Qualification: AEC-Q101, Grade: Automotive, Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ).
Інші пропозиції BUK7510-55AL,127
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
BUK7510-55AL,127 | NXP USA Inc. |
 Description: MOSFET N-CH 55V 75A TO220ABQualification: AEC-Q101 Grade: Automotive Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Drain to Source Voltage (Vdss): 55 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-220AB Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 300W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
товару немає в наявності |
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 |
BUK7510-55AL,127 | Nexperia USA Inc. |
Description: BUK7510-55AL,127 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-220AB Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V Qualification: AEC-Q101 |
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 |
BUK7510-55AL,127 | Nexperia |
MOSFET Trans MOSFET N-CH 55V 122A 3Pin(3+Tab) |
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В кошику од. на суму грн. |
| BUK7510-55AL,127 |
|
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 75A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET N-CH 55V 75A TO220AB
Qualification: AEC-Q101
Grade: Automotive
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 300W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
товару немає в наявності
В кошику
од. на суму грн.
| BUK7510-55AL,127 |
|
Виробник: Nexperia USA Inc.
Description: BUK7510-55AL,127
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V
Qualification: AEC-Q101
Description: BUK7510-55AL,127
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-220AB
Grade: Automotive
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6280 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BUK7510-55AL,127 |
|
Виробник: Nexperia
MOSFET Trans MOSFET N-CH 55V 122A 3Pin(3+Tab)
MOSFET Trans MOSFET N-CH 55V 122A 3Pin(3+Tab)
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В кошику
од. на суму грн.