BUK754R0-55B,127 NXP USA Inc.

Description: PFET, 75A I(D), 55V, 0.004OHM, 1, Input Capacitance (Ciss) (Max) @ Vds: 6776 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 300W (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.