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BUK7606-55B,118

BUK7606-55B,118 Nexperia USA Inc.

BUK7606-55B.pdf
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
на замовлення 11 шт:
термін постачання 21-31 дні (днів)
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3+112.35 грн
10+89.90 грн
Мінімальне замовлення: 3
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Технічний опис BUK7606-55B,118 Nexperia USA Inc.

Description: MOSFET N-CH 55V 75A D2PAK, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 254W (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Tc).

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BUK7606-55B,118 BUK7606-55B,118 Nexperia USA Inc. BUK7606-55B.pdf Description: MOSFET N-CH 55V 75A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
товару немає в наявності
В кошику  од. на суму  грн.
BUK7606-55B,118 BUK7606-55B,118 Nexperia BUK7606-55B-1598593.pdf MOSFET HIGH PERF TRENCHMOS
товару немає в наявності
В кошику  од. на суму  грн.
BUK7606-55B,118 BUK7606-55B.pdf
BUK7606-55B,118
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A D2PAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 5100 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 254W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
товару немає в наявності
В кошику  од. на суму  грн.
BUK7606-55B,118 BUK7606-55B-1598593.pdf
BUK7606-55B,118
Виробник: Nexperia
MOSFET HIGH PERF TRENCHMOS
товару немає в наявності
В кошику  од. на суму  грн.