BUK7A1R3-100LJ Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: BUK7A1R3-100L/SOT8000A/CCPAK12
Packaging: Tape & Reel (TR)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 355A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CCPAK1212
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 383 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25436 pF @ 50 V
Qualification: AEC-Q101
Description: BUK7A1R3-100L/SOT8000A/CCPAK12
Packaging: Tape & Reel (TR)
Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 355A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Power Dissipation (Max): 935W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: CCPAK1212
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 7V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 383 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 25436 pF @ 50 V
Qualification: AEC-Q101
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис BUK7A1R3-100LJ Nexperia USA Inc.
Description: BUK7A1R3-100L/SOT8000A/CCPAK12, Packaging: Tape & Reel (TR), Package / Case: 12-BESOP (0.370", 9.40mm Width), Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 355A (Tc), Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V, Power Dissipation (Max): 935W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: CCPAK1212, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 7V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 383 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 25436 pF @ 50 V, Qualification: AEC-Q101.