BUK7E13-60E,127 Nexperia USA Inc.

Description: MOSFET N-CH 60V 58A I2PAK, Input Capacitance (Ciss) (Max) @ Vds: 1730 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 22.9 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Obsolete, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 96W (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 58A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Tube, Qualification: AEC-Q101, Grade: Automotive.