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BUK7E1R8-40E,127

BUK7E1R8-40E,127 Nexperia USA Inc.

BUK7E1R8-40E.pdf
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A I2PAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Bulk
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
на замовлення 30226 шт:
термін постачання 21-31 дні (днів)
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243+90.59 грн
Мінімальне замовлення: 243
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Технічний опис BUK7E1R8-40E,127 Nexperia USA Inc.

Description: MOSFET N-CH 40V 120A I2PAK, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 349W (Tc), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Packaging: Bulk, FET Type: N-Channel, Technology: MOSFET (Metal Oxide).

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BUK7E1R8-40E,127 BUK7E1R8-40E,127 Nexperia USA Inc. BUK7E1R8-40E.pdf Description: MOSFET N-CH 40V 120A I2PAK
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
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BUK7E1R8-40E,127 BUK7E1R8-40E,127 Nexperia BUK7E1R8-40E-1598889.pdf MOSFET BUK7E1R8-40E/I2PAK/STANDARD MA
товару немає в наявності
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BUK7E1R8-40E,127 BUK7E1R8-40E.pdf
BUK7E1R8-40E,127
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 120A I2PAK
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 11340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 349W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
товару немає в наявності
В кошику  од. на суму  грн.
BUK7E1R8-40E,127 BUK7E1R8-40E-1598889.pdf
BUK7E1R8-40E,127
Виробник: Nexperia
MOSFET BUK7E1R8-40E/I2PAK/STANDARD MA
товару немає в наявності
В кошику  од. на суму  грн.