BUK7E5R2-100E,127 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: NEXPERIA BUK7E5R2-100E - 120A, 1
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: I2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11810 pF @ 25 V
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 112+ | 183.13 грн |
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Технічний опис BUK7E5R2-100E,127 Nexperia USA Inc.
Description: NEXPERIA BUK7E5R2-100E - 120A, 1, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 5.2mOhm @ 25A, 10V, Power Dissipation (Max): 349W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: I2PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11810 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK7E5R2-100E,127
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
BUK7E5R2-100E,127 | Nexperia |
MOSFET N-channel TrenchMOS standard level FET |
товару немає в наявності |
В кошику од. на суму грн. |
| BUK7E5R2-100E,127 |
|
Виробник: Nexperia
MOSFET N-channel TrenchMOS standard level FET
MOSFET N-channel TrenchMOS standard level FET
товару немає в наявності
В кошику
од. на суму грн.