BUK7M9R9-60EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 60A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
| Кількість | Ціна |
|---|---|
| 1500+ | 27.82 грн |
| 3000+ | 24.66 грн |
| 4500+ | 23.58 грн |
Відгуки про товар
Написати відгук
Технічний опис BUK7M9R9-60EX Nexperia USA Inc.
Description: MOSFET N-CH 60V 60A LFPAK33, Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: LFPAK33, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 79W (Tc), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive.
Інші пропозиції BUK7M9R9-60EX за ціною від 20.81 грн до 98.98 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
BUK7M9R9-60EX | Nexperia |
MOSFETs SOT1210 N-CH 60V 60A |
на замовлення 27629 шт: термін постачання 21-30 дні (днів) |
|
||||||||||||||
|
|
BUK7M9R9-60EX | Nexperia USA Inc. |
Description: MOSFET N-CH 60V 60A LFPAK33 Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK33 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 79W (Tc) Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 60A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 5558 шт: термін постачання 21-31 дні (днів) |
|
| BUK7M9R9-60EX |
|
Виробник: Nexperia
MOSFETs SOT1210 N-CH 60V 60A
MOSFETs SOT1210 N-CH 60V 60A
на замовлення 27629 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 65.17 грн |
| 10+ | 50.11 грн |
| 100+ | 32.68 грн |
| 500+ | 27.44 грн |
| 1000+ | 21.37 грн |
| 1500+ | 21.02 грн |
| 3000+ | 20.81 грн |
| BUK7M9R9-60EX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 60V 60A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 60V 60A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2007 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30.1 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 79W (Tc)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 5558 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 98.98 грн |
| 10+ | 59.91 грн |
| 100+ | 39.71 грн |
| 500+ | 29.11 грн |