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BUK7Y08-40B,115 Nexperia

Name: BUK7Y08-40B,115
Brand: Nexperia
SKU: 146527-4
Price: 422.28 UAH
Availability: InStock

Виробник: Nexperia
MOSFET BUK7Y08-40B/SOT669/LFPAK

на замовлення 59 шт:

термін постачання 21-30 дні (днів)

Кількість	Ціна
4+	105.57 грн
10+	93.06 грн
100+	61.65 грн
500+	50.98 грн
1000+	40.24 грн
1500+	40.17 грн

Мінімальне замовлення: 4

В кошику од. на суму грн.

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Технічний опис BUK7Y08-40B,115 Nexperia

Description: MOSFET N-CH 40V 75A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V, Power Dissipation (Max): 105W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.

Інші пропозиції BUK7Y08-40B,115

Назва	Виробник	Інформація	Доступність	Ціна
BUK7Y08-40B,115	Виробник : NEXPERIA	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W Application: automotive industry Power dissipation: 105W Polarisation: unipolar Kind of package: reel; tape Gate charge: 36.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 332A Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: 40V Drain current: 58.85A On-state resistance: 8mΩ Type of transistor: N-MOSFET кількість в упаковці: 1 шт	товару немає в наявності	В кошику од. на суму грн.
BUK7Y08-40B,115	Виробник : Nexperia USA Inc.	Description: MOSFET N-CH 40V 75A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V Grade: Automotive Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
BUK7Y08-40B,115	Виробник : Nexperia USA Inc.	Description: MOSFET N-CH 40V 75A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 25A, 10V Power Dissipation (Max): 105W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2040 pF @ 25 V Grade: Automotive Qualification: AEC-Q101	товару немає в наявності	В кошику од. на суму грн.
BUK7Y08-40B,115	Виробник : NEXPERIA	Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 58.85A; Idm: 332A; 105W Application: automotive industry Power dissipation: 105W Polarisation: unipolar Kind of package: reel; tape Gate charge: 36.3nC Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 332A Mounting: SMD Case: LFPAK56; PowerSO8; SOT669 Drain-source voltage: 40V Drain current: 58.85A On-state resistance: 8mΩ Type of transistor: N-MOSFET	товару немає в наявності	В кошику од. на суму грн.