| Кількість | Ціна |
|---|---|
| 2+ | 184.44 грн |
| 10+ | 116.70 грн |
| 100+ | 69.72 грн |
| 500+ | 58.40 грн |
| 1000+ | 51.78 грн |
| 1500+ | 48.95 грн |
| 3000+ | 46.74 грн |
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Технічний опис BUK7Y12-100EX Nexperia
Description: MOSFET N-CH 100V 85A LFPAK56, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 5067 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Grade: Automotive, Supplier Device Package: LFPAK56, Power-SO8, Vgs(th) (Max) @ Id: 4V @ 1mA, Power Dissipation (Max): 238W (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 85A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-100, SOT-669, Packaging: Tape & Reel (TR).
Інші пропозиції BUK7Y12-100EX за ціною від 83.38 грн до 208.91 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BUK7Y12-100EX | Nexperia USA Inc. |
 Description: MOSFET N-CH 100V 85A LFPAK56Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 238W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 5067 pF @ 25 V |
на замовлення 1189 шт: термін постачання 21-31 дні (днів) |
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BUK7Y12-100EX | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 85A LFPAK56 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 5067 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 238W (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) |
на замовлення 1189 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1189 шт В кошику од. на суму грн. |
| BUK7Y12-100EX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 85A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 238W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5067 pF @ 25 V
Description: MOSFET N-CH 100V 85A LFPAK56
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 238W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5067 pF @ 25 V
на замовлення 1189 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 208.91 грн |
| 10+ | 129.83 грн |
| 50+ | 98.84 грн |
| 100+ | 83.38 грн |
| BUK7Y12-100EX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 85A LFPAK56
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5067 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 238W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 85A LFPAK56
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 5067 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 238W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 85A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
на замовлення 1189 шт:
термін постачання 21-31 дні (днів)