BUK7Y12-40EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 52A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
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Технічний опис BUK7Y12-40EX Nexperia USA Inc.
Description: NEXPERIA - BUK7Y12-40EX - Leistungs-MOSFET, n-Kanal, 40 V, 52 A, 9300 µohm, SOT-669, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 40V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 52A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 65W, SVHC: Lead (25-Jun-2025), Bauform - Transistor: SOT-669, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 9300µohm.
Інші пропозиції BUK7Y12-40EX за ціною від 16.71 грн до 161.08 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BUK7Y12-40EX | Nexperia |
MOSFETs N-channel 40 V, 12 mohm standard level MOSFET in LFPAK56 |
на замовлення 2485 шт: термін постачання 21-30 дні (днів) |
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BUK7Y12-40EX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 52A LFPAK56 Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 4V @ 1mA Power Dissipation (Max): 65W (Tc) Qualification: AEC-Q101 Grade: Automotive Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
на замовлення 2704 шт: термін постачання 21-31 дні (днів) |
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BUK7Y12-40EX | NEXPERIA |
Description: NEXPERIA - BUK7Y12-40EX - Leistungs-MOSFET, n-Kanal, 40 V, 52 A, 9300 µohm, SOT-669, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 52A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 65W SVHC: Lead (25-Jun-2025) Bauform - Transistor: SOT-669 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 9300µohm |
на замовлення 4626 шт: термін постачання 21-31 дні (днів) |
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| BUK7Y12-40EX |
|
Виробник: Nexperia
MOSFETs N-channel 40 V, 12 mohm standard level MOSFET in LFPAK56
MOSFETs N-channel 40 V, 12 mohm standard level MOSFET in LFPAK56
на замовлення 2485 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 53.64 грн |
| 10+ | 37.39 грн |
| 100+ | 22.23 грн |
| 250+ | 22.16 грн |
| 500+ | 21.06 грн |
| 1000+ | 18.85 грн |
| 1500+ | 16.71 грн |
| BUK7Y12-40EX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 52A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 65W (Tc)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 52A LFPAK56
Input Capacitance (Ciss) (Max) @ Vds: 1039 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 4V @ 1mA
Power Dissipation (Max): 65W (Tc)
Qualification: AEC-Q101
Grade: Automotive
Rds On (Max) @ Id, Vgs: 12mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
на замовлення 2704 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 110.28 грн |
| 10+ | 66.56 грн |
| 50+ | 49.49 грн |
| 100+ | 41.28 грн |
| BUK7Y12-40EX |
|
Виробник: NEXPERIA
Description: NEXPERIA - BUK7Y12-40EX - Leistungs-MOSFET, n-Kanal, 40 V, 52 A, 9300 µohm, SOT-669, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 52A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 65W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: SOT-669
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 9300µohm
Description: NEXPERIA - BUK7Y12-40EX - Leistungs-MOSFET, n-Kanal, 40 V, 52 A, 9300 µohm, SOT-669, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 52A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 65W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: SOT-669
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 9300µohm
на замовлення 4626 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 161.08 грн |
| 11+ | 78.04 грн |
| 100+ | 55.01 грн |
| 500+ | 40.91 грн |
| 1000+ | 34.59 грн |