BUK7Y153-100EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Tape & Reel (TR)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 153mOhm @ 2A, 10V
Power Dissipation (Max): 37.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис BUK7Y153-100EX Nexperia USA Inc.
Description: NEXPERIA - BUK7Y153-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 9.4 A, 0.104 ohm, SOT-669, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 100V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 9.4A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 37.3W, SVHC: Lead (25-Jun-2025), Bauform - Transistor: SOT-669, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.104ohm.
Інші пропозиції BUK7Y153-100EX за ціною від 11.80 грн до 115.98 грн
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BUK7Y153-100EX | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 9.4A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc) Rds On (Max) @ Id, Vgs: 153mOhm @ 2A, 10V Power Dissipation (Max): 37.3W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 2208 шт: термін постачання 21-31 дні (днів) |
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BUK7Y153-100EX | Nexperia |
MOSFETs SOT669 100V 9.4A |
на замовлення 2065 шт: термін постачання 21-30 дні (днів) |
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BUK7Y153-100EX | NEXPERIA |
Description: NEXPERIA - BUK7Y153-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 9.4 A, 0.104 ohm, SOT-669, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 9.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 37.3W SVHC: Lead (25-Jun-2025) Bauform - Transistor: SOT-669 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.104ohm |
на замовлення 865 шт: термін постачання 21-31 дні (днів) |
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| BUK7Y153-100EX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 153mOhm @ 2A, 10V
Power Dissipation (Max): 37.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 9.4A LFPAK56
Packaging: Cut Tape (CT)
Package / Case: SC-100, SOT-669
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 153mOhm @ 2A, 10V
Power Dissipation (Max): 37.3W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: LFPAK56, Power-SO8
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 497 pF @ 25 V
Qualification: AEC-Q101
на замовлення 2208 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.35 грн |
| 10+ | 36.65 грн |
| 100+ | 23.75 грн |
| 500+ | 17.08 грн |
| BUK7Y153-100EX |
|
Виробник: Nexperia
MOSFETs SOT669 100V 9.4A
MOSFETs SOT669 100V 9.4A
на замовлення 2065 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 64.43 грн |
| 10+ | 39.30 грн |
| 100+ | 22.23 грн |
| 500+ | 17.05 грн |
| 1000+ | 14.50 грн |
| 1500+ | 13.19 грн |
| 3000+ | 11.80 грн |
| BUK7Y153-100EX |
|
Виробник: NEXPERIA
Description: NEXPERIA - BUK7Y153-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 9.4 A, 0.104 ohm, SOT-669, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 9.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 37.3W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: SOT-669
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.104ohm
Description: NEXPERIA - BUK7Y153-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 9.4 A, 0.104 ohm, SOT-669, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 9.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 37.3W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: SOT-669
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.104ohm
на замовлення 865 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 115.98 грн |
| 15+ | 56.54 грн |
| 100+ | 39.79 грн |
| 500+ | 32.53 грн |