Технічний опис BUK7Y7R0-40HX Nexperia
Description: NEXPERIA - BUK7Y7R0-40HX - Leistungs-MOSFET, n-Kanal, 40 V, 68 A, 5700 µohm, LFPAK56, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 68A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 64W, SVHC: Lead (25-Jun-2025), Bauform - Transistor: LFPAK56, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: n-Kanal, Betriebstemperatur, max.: 175°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 5700µohm.
Інші пропозиції BUK7Y7R0-40HX за ціною від 23.04 грн до 136.05 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BUK7Y7R0-40HX | Nexperia USA Inc. |
 Description: MOSFET N-CH 40V 68A LFPAK56Qualification: AEC-Q101 Grade: Automotive Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V |
на замовлення 3000 шт: термін постачання 21-31 дні (днів) |
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BUK7Y7R0-40HX | NEXPERIA |
Description: NEXPERIA - BUK7Y7R0-40HX - Leistungs-MOSFET, n-Kanal, 40 V, 68 A, 5700 µohm, LFPAK56, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 68A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 64W SVHC: Lead (25-Jun-2025) Bauform - Transistor: LFPAK56 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 5700µohm |
на замовлення 1452 шт: термін постачання 21-31 дні (днів) |
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BUK7Y7R0-40HX | Nexperia |
MOSFETs SOT669 N-CH 40V 68A |
на замовлення 703 шт: термін постачання 21-30 дні (днів) |
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BUK7Y7R0-40HX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W Polarisation: unipolar Gate charge: 26nC On-state resistance: 13.6mΩ Drain current: 48A Power dissipation: 64W Gate-source voltage: ±20V Pulsed drain current: 272A Application: automotive industry Drain-source voltage: 40V Case: LFPAK56; PowerSO8; SOT669 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD |
на замовлення 1362 шт: термін постачання 14-30 дні (днів) |
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BUK7Y7R0-40HX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 68A LFPAK56 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: LFPAK56, Power-SO8 Vgs(th) (Max) @ Id: 3.6V @ 1mA Power Dissipation (Max): 64W (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 68A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SC-100, SOT-669 Packaging: Cut Tape (CT) |
на замовлення 3291 шт: термін постачання 21-31 дні (днів) |
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BUK7Y7R0-40HX | NEXPERIA |
Description: NEXPERIA - BUK7Y7R0-40HX - Leistungs-MOSFET, n-Kanal, 40 V, 68 A, 5700 µohm, LFPAK56, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 68A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 64W SVHC: Lead (25-Jun-2025) Bauform - Transistor: LFPAK56 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 5700µohm |
на замовлення 1452 шт: термін постачання 21-31 дні (днів) |
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| BUK7Y7R0-40HX |
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Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 68A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Description: MOSFET N-CH 40V 68A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
на замовлення 3000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 38.71 грн |
| 3000+ | 34.42 грн |
| BUK7Y7R0-40HX |
|
Виробник: NEXPERIA
Description: NEXPERIA - BUK7Y7R0-40HX - Leistungs-MOSFET, n-Kanal, 40 V, 68 A, 5700 µohm, LFPAK56, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 68A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 64W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: LFPAK56
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5700µohm
Description: NEXPERIA - BUK7Y7R0-40HX - Leistungs-MOSFET, n-Kanal, 40 V, 68 A, 5700 µohm, LFPAK56, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 68A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 64W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: LFPAK56
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5700µohm
на замовлення 1452 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 49.04 грн |
| 500+ | 35.33 грн |
| 1000+ | 29.12 грн |
| BUK7Y7R0-40HX |
|
Виробник: Nexperia
MOSFETs SOT669 N-CH 40V 68A
MOSFETs SOT669 N-CH 40V 68A
на замовлення 703 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 64.44 грн |
| 10+ | 43.68 грн |
| 1500+ | 37.99 грн |
| 24000+ | 23.04 грн |
| BUK7Y7R0-40HX |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Polarisation: unipolar
Gate charge: 26nC
On-state resistance: 13.6mΩ
Drain current: 48A
Power dissipation: 64W
Gate-source voltage: ±20V
Pulsed drain current: 272A
Application: automotive industry
Drain-source voltage: 40V
Case: LFPAK56; PowerSO8; SOT669
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 48A; Idm: 272A; 64W
Polarisation: unipolar
Gate charge: 26nC
On-state resistance: 13.6mΩ
Drain current: 48A
Power dissipation: 64W
Gate-source voltage: ±20V
Pulsed drain current: 272A
Application: automotive industry
Drain-source voltage: 40V
Case: LFPAK56; PowerSO8; SOT669
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
на замовлення 1362 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 72.41 грн |
| 10+ | 53.79 грн |
| 25+ | 47.91 грн |
| 100+ | 40.34 грн |
| 250+ | 36.14 грн |
| 500+ | 33.62 грн |
| 1000+ | 31.94 грн |
| BUK7Y7R0-40HX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 68A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 40V 68A LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: LFPAK56, Power-SO8
Vgs(th) (Max) @ Id: 3.6V @ 1mA
Power Dissipation (Max): 64W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-100, SOT-669
Packaging: Cut Tape (CT)
на замовлення 3291 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 134.33 грн |
| 10+ | 81.85 грн |
| 50+ | 61.29 грн |
| 100+ | 51.27 грн |
| BUK7Y7R0-40HX |
|
Виробник: NEXPERIA
Description: NEXPERIA - BUK7Y7R0-40HX - Leistungs-MOSFET, n-Kanal, 40 V, 68 A, 5700 µohm, LFPAK56, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 68A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 64W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: LFPAK56
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5700µohm
Description: NEXPERIA - BUK7Y7R0-40HX - Leistungs-MOSFET, n-Kanal, 40 V, 68 A, 5700 µohm, LFPAK56, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 68A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 64W
SVHC: Lead (25-Jun-2025)
Bauform - Transistor: LFPAK56
Anzahl der Pins: 4Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 5700µohm
на замовлення 1452 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 136.05 грн |
| 11+ | 74.54 грн |
| 100+ | 49.04 грн |
| 500+ | 35.33 грн |
| 1000+ | 29.12 грн |