Технічний опис BUK7Y98-80EX Nexperia
Description: MOSFET N-CH 80V 12.3A LFPAK56, Packaging: Tape & Reel (TR), Package / Case: SC-100, SOT-669, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc), Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V, Power Dissipation (Max): 37W (Tc), Vgs(th) (Max) @ Id: 4V @ 1mA, Supplier Device Package: LFPAK56, Power-SO8, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V, Qualification: AEC-Q100.
Інші пропозиції BUK7Y98-80EX
| Фото | Назва | Виробник | Інформація |
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BUK7Y98-80EX | Виробник : NEXPERIA |
 Trans MOSFET N-CH 80V 12.3A Automotive 5-Pin(4+Tab) LFPAK T/R |
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| BUK7Y98-80EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 8.7A; Idm: 49A; 37W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 8.7A Pulsed drain current: 49A Power dissipation: 37W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 246mΩ Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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BUK7Y98-80EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 12.3A LFPAK56 Packaging: Tape & Reel (TR) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V Qualification: AEC-Q100 |
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BUK7Y98-80EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 12.3A LFPAK56 Packaging: Cut Tape (CT) Package / Case: SC-100, SOT-669 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.3A (Tc) Rds On (Max) @ Id, Vgs: 98mOhm @ 5A, 10V Power Dissipation (Max): 37W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: LFPAK56, Power-SO8 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 25 V Qualification: AEC-Q100 |
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BUK7Y98-80EX | Виробник : Nexperia |
MOSFET BUK7Y98-80E/SOT669/LFPAK |
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| BUK7Y98-80EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 8.7A; Idm: 49A; 37W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 8.7A Pulsed drain current: 49A Power dissipation: 37W Case: LFPAK56; PowerSO8; SOT669 Gate-source voltage: ±20V On-state resistance: 246mΩ Mounting: SMD Gate charge: 8.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
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