Технічний опис BUK9219-55A,118 Nexperia
Description: MOSFET N-CH 55V 55A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V, Power Dissipation (Max): 114W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: DPAK, Grade: Automotive, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 55 V, Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK9219-55A,118
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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BUK9219-55A,118 | Nexperia USA Inc. |
 Description: MOSFET N-CH 55V 55A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: DPAK Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 55 V Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
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BUK9219-55A,118 | Nexperia USA Inc. |
Description: MOSFET N-CH 55V 55A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: DPAK Grade: Automotive Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 55 V Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V Qualification: AEC-Q101 |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BUK9219-55A,118 | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 38A; Idm: 219A; 114W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 38A Pulsed drain current: 219A Power dissipation: 114W Case: DPAK Gate-source voltage: ±10V On-state resistance: 38mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
 |
BUK9219-55A,118 | Nexperia |
Trans MOSFET N-CH 55V 55A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R |
товару немає в наявності |
Мінімальне замовлення: 10000 шт В кошику од. на суму грн. |
| BUK9219-55A,118 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.
| BUK9219-55A,118 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 55V 55A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Tc)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 25A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 2920 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
В кошику
од. на суму грн.
| BUK9219-55A,118 |
|
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 38A; Idm: 219A; 114W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 38A
Pulsed drain current: 219A
Power dissipation: 114W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 38mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 55V; 38A; Idm: 219A; 114W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 55V
Drain current: 38A
Pulsed drain current: 219A
Power dissipation: 114W
Case: DPAK
Gate-source voltage: ±10V
On-state resistance: 38mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.
| BUK9219-55A,118 |
|
Виробник: Nexperia
Trans MOSFET N-CH 55V 55A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH 55V 55A Automotive AEC-Q101 3-Pin(2+Tab) DPAK T/R
товару немає в наявності
Мінімальне замовлення: 10000 шт
В кошику
од. на суму грн.