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BUK95150-55A,127

BUK95150-55A,127 NXP USA Inc.

BUK9%285%2C6%29150-55A.pdf
Виробник: NXP USA Inc.
Description: MOSFET N-CH 55V 13A TO220AB
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 53W (Tc)
Rds On (Max) @ Id, Vgs: 137mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 25 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±10V
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Технічний опис BUK95150-55A,127 NXP USA Inc.

Description: MOSFET N-CH 55V 13A TO220AB, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 53W (Tc), Rds On (Max) @ Id, Vgs: 137mOhm @ 13A, 10V, Current - Continuous Drain (Id) @ 25°C: 13A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 339 pF @ 25 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±10V.