BUK9615-100E,118 NEXPERIA
Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 266A; 182W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 266A
Drain-source voltage: 100V
Drain current: 47A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 266A; 182W
Mounting: SMD
Case: D2PAK; SOT404
Kind of package: reel; tape
Pulsed drain current: 266A
Drain-source voltage: 100V
Drain current: 47A
On-state resistance: 41mΩ
Type of transistor: N-MOSFET
Application: automotive industry
Power dissipation: 182W
Polarisation: unipolar
Gate charge: 60nC
Kind of channel: enhanced
Gate-source voltage: ±10V
кількість в упаковці: 1 шт
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Технічний опис BUK9615-100E,118 NEXPERIA
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 266A; 182W, Mounting: SMD, Case: D2PAK; SOT404, Kind of package: reel; tape, Pulsed drain current: 266A, Drain-source voltage: 100V, Drain current: 47A, On-state resistance: 41mΩ, Type of transistor: N-MOSFET, Application: automotive industry, Power dissipation: 182W, Polarisation: unipolar, Gate charge: 60nC, Kind of channel: enhanced, Gate-source voltage: ±10V, кількість в упаковці: 1 шт.
Інші пропозиції BUK9615-100E,118
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BUK9615-100E,118 | Виробник : NXP USA Inc. | Description: MOSFET N-CH 100V 66A D2PAK |
товар відсутній |
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BUK9615-100E,118 | Виробник : Nexperia | MOSFET N-CHANNEL TRENCH LOGIC LEVEL |
товар відсутній |
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BUK9615-100E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47A; Idm: 266A; 182W Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Pulsed drain current: 266A Drain-source voltage: 100V Drain current: 47A On-state resistance: 41mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 182W Polarisation: unipolar Gate charge: 60nC Kind of channel: enhanced Gate-source voltage: ±10V |
товар відсутній |