BUK9635-100A,118 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 100V 41A D2PAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 3573 pF @ 25 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 149W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 41A (Tc)
FET Type: N-Channel
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Технічний опис BUK9635-100A,118 NXP USA Inc.
Description: MOSFET N-CH 100V 41A D2PAK, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 3573 pF @ 25 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Grade: Automotive, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2V @ 1mA, Power Dissipation (Max): 149W (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 41A (Tc), FET Type: N-Channel.
Інші пропозиції BUK9635-100A,118
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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BUK9635-100A,118 | Виробник : Nexperia |
MOSFET TAPE13 PWR-MOS |
товару немає в наявності |