на замовлення 2787 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 214.67 грн |
| 10+ | 177.99 грн |
| 100+ | 125.54 грн |
| 500+ | 124.88 грн |
| 800+ | 94.32 грн |
| 2400+ | 89.01 грн |
| 4800+ | 87.02 грн |
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Технічний опис BUK963R3-60E,118 Nexperia
Description: MOSFET N-CH 60V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V, Power Dissipation (Max): 293W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V.
Інші пропозиції BUK963R3-60E,118
| Фото | Назва | Виробник | Інформація |
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BUK963R3-60E,118 | Виробник : Nexperia |
 Trans MOSFET N-CH 60V 120A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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BUK963R3-60E,118 | Виробник : NEXPERIA |
Trans MOSFET N-CH 60V 120A Automotive 3-Pin(2+Tab) D2PAK T/R |
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| BUK963R3-60E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 803A; 293W Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Application: automotive industry On-state resistance: 7.3mΩ Type of transistor: N-MOSFET Power dissipation: 293W Polarisation: unipolar Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 803A Drain-source voltage: 60V Drain current: 120A кількість в упаковці: 800 шт |
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BUK963R3-60E,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V Power Dissipation (Max): 293W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V |
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BUK963R3-60E,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 25A, 10V Power Dissipation (Max): 293W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 13490 pF @ 25 V |
товар відсутній |
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| BUK963R3-60E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 120A; Idm: 803A; 293W Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Application: automotive industry On-state resistance: 7.3mΩ Type of transistor: N-MOSFET Power dissipation: 293W Polarisation: unipolar Gate charge: 95nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: 803A Drain-source voltage: 60V Drain current: 120A |
товар відсутній |