BUK964R7-80E,118 Nexperia
| Кількість | Ціна без ПДВ |
|---|---|
| 213+ | 165.08 грн |
| 500+ | 155.71 грн |
| 1000+ | 147.51 грн |
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Технічний опис BUK964R7-80E,118 Nexperia
Description: MOSFET N-CH 80V 120A D2PAK, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Last Time Buy, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 324W (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Інші пропозиції BUK964R7-80E,118 за ціною від 144.69 грн до 321.75 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
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BUK964R7-80E,118 | Nexperia USA Inc. |
 Description: MOSFET N-CH 80V 120A D2PAKQualification: AEC-Q101 Grade: Automotive Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Last Time Buy Supplier Device Package: D2PAK Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 324W (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel |
на замовлення 315 шт: термін постачання 21-31 дні (днів) |
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| BUK964R7-80E,118 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 324W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 80V 120A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Last Time Buy
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 324W (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
на замовлення 315 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 321.75 грн |
| 10+ | 204.50 грн |
| 100+ | 144.69 грн |