BUK964R7-80E,118 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 80V 120A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V
Power Dissipation (Max): 324W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 800+ | 134.47 грн |
| 1600+ | 110.87 грн |
| 2400+ | 104.4 грн |
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Технічний опис BUK964R7-80E,118 Nexperia USA Inc.
Description: MOSFET N-CH 80V 120A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V, Power Dissipation (Max): 324W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: D2PAK, Part Status: Last Time Buy, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK964R7-80E,118 за ціною від 145.68 грн до 222.75 грн
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BUK964R7-80E,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 80V 120A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 25A, 10V Power Dissipation (Max): 324W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 92.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 15340 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 4795 шт: термін постачання 21-31 дні (днів) |
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| BUK964R7-80E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 667A; 324W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 667A Power dissipation: 324W Case: D2PAK; SOT404 Gate-source voltage: ±10V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 92.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 800 шт |
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BUK964R7-80E,118 | Виробник : Nexperia |
MOSFET BUK964R7-80E/SOT404/D2PAK |
товар відсутній |
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| BUK964R7-80E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 120A; Idm: 667A; 324W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 120A Pulsed drain current: 667A Power dissipation: 324W Case: D2PAK; SOT404 Gate-source voltage: ±10V On-state resistance: 11.7mΩ Mounting: SMD Gate charge: 92.1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |