BUK969R0-60E,118 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
Power Dissipation (Max): 137W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: D2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V
Qualification: AEC-Q101
на замовлення 4000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 59.42 грн |
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Технічний опис BUK969R0-60E,118 Nexperia USA Inc.
Description: MOSFET N-CH 60V 75A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V, Power Dissipation (Max): 137W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: D2PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK969R0-60E,118 за ціною від 55.76 грн до 203.73 грн
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BUK969R0-60E,118 | Виробник : Nexperia |
MOSFETs BUK969R0-60E/SOT404/D2PAK |
на замовлення 3312 шт: термін постачання 21-30 дні (днів) |
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BUK969R0-60E,118 | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 60V 75A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 137W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: D2PAK Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 29.8 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 5111 шт: термін постачання 21-31 дні (днів) |
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| BUK969R0-60E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 333A; 137W Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 59A On-state resistance: 19.8mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 137W Polarisation: unipolar Gate charge: 29.8nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 333A кількість в упаковці: 1 шт |
товару немає в наявності |
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| BUK969R0-60E,118 | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 59A; Idm: 333A; 137W Mounting: SMD Case: D2PAK; SOT404 Kind of package: reel; tape Drain-source voltage: 60V Drain current: 59A On-state resistance: 19.8mΩ Type of transistor: N-MOSFET Application: automotive industry Power dissipation: 137W Polarisation: unipolar Gate charge: 29.8nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: 333A |
товару немає в наявності |