BUK9E06-55A,127 Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 55V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: I2PAK
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 55 V
Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V
Qualification: AEC-Q101
товару немає в наявності
Відгуки про товар
Написати відгук
Технічний опис BUK9E06-55A,127 Nexperia USA Inc.
Description: MOSFET N-CH 55V 75A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 5.8mOhm @ 25A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: I2PAK, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 55 V, Input Capacitance (Ciss) (Max) @ Vds: 8600 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK9E06-55A,127
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| BUK9E06-55A,127 | Виробник : NXP USA Inc. |
Description: MOSFET N-CH 55V 75A I2PAK Packaging: Tube |
товару немає в наявності |
||
 |
BUK9E06-55A,127 | Виробник : Nexperia |
MOSFET Trans MOSFET N-CH 55V 154A 3Pin(3+Tab) |
товару немає в наявності |