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BUK9E2R3-40E,127 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 120A I2PAK
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 13160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87.8 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 293W (Tc)
| Кількість | Ціна |
|---|---|
| 300+ | 75.04 грн |
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Технічний опис BUK9E2R3-40E,127 NXP USA Inc.
Description: MOSFET N-CH 40V 120A I2PAK, Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 13160 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 87.8 nC @ 5 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Supplier Device Package: I2PAK, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 293W (Tc).
Інші пропозиції BUK9E2R3-40E,127
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
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BUK9E2R3-40E,127 | NXP USA Inc. |
Description: MOSFET N-CH 40V 120A I2PAK Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Supplier Device Package: I2PAK Vgs(th) (Max) @ Id: 2.1V @ 1mA Input Capacitance (Ciss) (Max) @ Vds: 13160 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 87.8 nC @ 5 V Drain to Source Voltage (Vdss): 40 V Power Dissipation (Max): 293W (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube |
товару немає в наявності |
В кошику од. на суму грн. |
 |
BUK9E2R3-40E,127 | Nexperia |
MOSFET BUK9E2R3-40E/I2PAK/STANDARD MA |
товару немає в наявності |
В кошику од. на суму грн. |
| BUK9E2R3-40E,127 |
|
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 120A I2PAK
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds: 13160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87.8 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Power Dissipation (Max): 293W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Description: MOSFET N-CH 40V 120A I2PAK
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: I2PAK
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds: 13160 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 87.8 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Power Dissipation (Max): 293W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
товару немає в наявності
В кошику
од. на суму грн.
| BUK9E2R3-40E,127 |
|
Виробник: Nexperia
MOSFET BUK9E2R3-40E/I2PAK/STANDARD MA
MOSFET BUK9E2R3-40E/I2PAK/STANDARD MA
товару немає в наявності
В кошику
од. на суму грн.