BUK9E4R4-40B,127 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 40V 75A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 254W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 7124 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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Технічний опис BUK9E4R4-40B,127 NXP USA Inc.
Description: MOSFET N-CH 40V 75A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V, Power Dissipation (Max): 254W (Tc), Vgs(th) (Max) @ Id: 2V @ 1mA, Supplier Device Package: I2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±15V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 7124 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK9E4R4-40B,127
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
BUK9E4R4-40B,127 | Nexperia |
MOSFET HIGH PERF TRENCHMOS |
товару немає в наявності |
В кошику од. на суму грн. |
| BUK9E4R4-40B,127 |
|
Виробник: Nexperia
MOSFET HIGH PERF TRENCHMOS
MOSFET HIGH PERF TRENCHMOS
товару немає в наявності
В кошику
од. на суму грн.