BUK9E4R4-80E,127 NXP USA Inc.
Виробник: NXP USA Inc.
Description: MOSFET N-CH 80V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 17130 pF @ 25 V
Description: MOSFET N-CH 80V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V
Power Dissipation (Max): 349W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: I2PAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 17130 pF @ 25 V
на замовлення 295 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 295+ | 89.35 грн |
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Технічний опис BUK9E4R4-80E,127 NXP USA Inc.
Description: MOSFET N-CH 80V 120A I2PAK, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V, Power Dissipation (Max): 349W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: I2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 17130 pF @ 25 V.
Інші пропозиції BUK9E4R4-80E,127
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
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BUK9E4R4-80E,127 | Виробник : NXP USA Inc. |
Description: MOSFET N-CH 80V 120A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 25A, 10V Power Dissipation (Max): 349W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: I2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 123 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 17130 pF @ 25 V |
товар відсутній |
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BUK9E4R4-80E,127 | Виробник : Nexperia |
 MOSFET BUK9E4R4-80E/I2PAK/STANDARD MA |
товар відсутній |