BUK9K13-40HX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 42A LFPAK56D
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 46W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
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Технічний опис BUK9K13-40HX Nexperia USA Inc.
Description: NEXPERIA - BUK9K13-40HX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 42 A, 42 A, 0.0136 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 40V, rohsCompliant: YES, Dauer-Drainstrom Id: 42A, Dauer-Drainstrom Id, p-Kanal: 42A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: N, Drain-Source-Spannung Vds, p-Kanal: 40V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 42A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 46W, Drain-Source-Spannung Vds, n-Kanal: 40V, euEccn: NLR, Bauform - Transistor: LFPAK56D, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0136ohm, productTraceability: No, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 46W, Betriebstemperatur, max.: 175°C, SVHC: Lead (25-Jun-2025).
Інші пропозиції BUK9K13-40HX за ціною від 28.58 грн до 205.38 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BUK9K13-40HX | Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 42A LFPAK56DConfiguration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 2.2V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V Current - Continuous Drain (Id) @ 25°C: 42A (Ta) Drain to Source Voltage (Vdss): 40V Power - Max: 46W (Ta) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) |
на замовлення 2965 шт: термін постачання 21-31 дні (днів) |
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BUK9K13-40HX | NEXPERIA |
Description: NEXPERIA - BUK9K13-40HX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 42 A, 42 A, 0.0136 ohmtariffCode: 85412900 Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 42A Dauer-Drainstrom Id, p-Kanal: 42A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 42A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 46W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0136ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 46W Betriebstemperatur, max.: 175°C SVHC: Lead (25-Jun-2025) |
на замовлення 822 шт: термін постачання 21-31 дні (днів) |
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BUK9K13-40HX | Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
на замовлення 143 шт: термін постачання 21-30 дні (днів) |
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BUK9K13-40HX | NEXPERIA |
Description: NEXPERIA - BUK9K13-40HX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 42 A, 42 A, 0.0136 ohmtariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 42A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 40V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 42A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 46W Drain-Source-Spannung Vds, n-Kanal: 40V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0136ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 46W Betriebstemperatur, max.: 175°C SVHC: Lead (25-Jun-2025) |
на замовлення 822 шт: термін постачання 21-31 дні (днів) |
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| BUK9K13-40HX |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 42A LFPAK56D
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 46W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Description: MOSFET 2N-CH 40V 42A LFPAK56D
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.2V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 19.4nC @ 10V
Rds On (Max) @ Id, Vgs: 13.6mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1160pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 42A (Ta)
Drain to Source Voltage (Vdss): 40V
Power - Max: 46W (Ta)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
на замовлення 2965 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 84.65 грн |
| 10+ | 62.67 грн |
| 100+ | 42.72 грн |
| 500+ | 39.05 грн |
| BUK9K13-40HX |
![]() |
Виробник: NEXPERIA
Description: NEXPERIA - BUK9K13-40HX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 42 A, 42 A, 0.0136 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 42A
Dauer-Drainstrom Id, p-Kanal: 42A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 40V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 42A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 46W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0136ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 46W
Betriebstemperatur, max.: 175°C
SVHC: Lead (25-Jun-2025)
Description: NEXPERIA - BUK9K13-40HX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 42 A, 42 A, 0.0136 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 40V
rohsCompliant: YES
Dauer-Drainstrom Id: 42A
Dauer-Drainstrom Id, p-Kanal: 42A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 40V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 42A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 46W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0136ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 46W
Betriebstemperatur, max.: 175°C
SVHC: Lead (25-Jun-2025)
на замовлення 822 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 88.59 грн |
| 500+ | 69.25 грн |
| BUK9K13-40HX |
![]() |
Виробник: Nexperia
MOSFETs The factory is currently not accepting orders for this product.
MOSFETs The factory is currently not accepting orders for this product.
на замовлення 143 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 121.62 грн |
| 10+ | 74.39 грн |
| 100+ | 42.46 грн |
| 500+ | 33.34 грн |
| 1000+ | 28.58 грн |
| BUK9K13-40HX |
![]() |
Виробник: NEXPERIA
Description: NEXPERIA - BUK9K13-40HX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 42 A, 42 A, 0.0136 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 42A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 40V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 42A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 46W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0136ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 46W
Betriebstemperatur, max.: 175°C
SVHC: Lead (25-Jun-2025)
Description: NEXPERIA - BUK9K13-40HX - Dual-MOSFET, n-Kanal, 40 V, 40 V, 42 A, 42 A, 0.0136 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 42A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 40V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 42A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 46W
Drain-Source-Spannung Vds, n-Kanal: 40V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0136ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 46W
Betriebstemperatur, max.: 175°C
SVHC: Lead (25-Jun-2025)
на замовлення 822 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 205.38 грн |
| 10+ | 131.28 грн |
| 100+ | 88.59 грн |
| 500+ | 69.25 грн |




