BUK9K13-60EX Nexperia
| Кількість | Ціна |
|---|---|
| 3+ | 155.60 грн |
| 10+ | 97.17 грн |
| 100+ | 56.98 грн |
| 500+ | 46.23 грн |
| 1000+ | 41.41 грн |
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Технічний опис BUK9K13-60EX Nexperia
Description: MOSFET 2N-CH 60V 40A LFPAK56D, Qualification: AEC-Q100, Grade: Automotive, Supplier Device Package: LFPAK56D, Vgs(th) (Max) @ Id: 2.1V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V, Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V, Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 40A, Drain to Source Voltage (Vdss): 60V, Power - Max: 64W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).
Інші пропозиції BUK9K13-60EX за ціною від 52.73 грн до 168.11 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BUK9K13-60EX | Nexperia USA Inc. |
 Description: MOSFET 2N-CH 60V 40A LFPAK56DPackaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 64W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1312 шт: термін постачання 21-31 дні (днів) |
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| BUK9K13-60EX |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET 2N-CH 60V 40A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 64W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 2953pF @ 25V
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 10A, 5V
Gate Charge (Qg) (Max) @ Vgs: 22.4nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1312 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2+ | 168.11 грн |
| 10+ | 103.64 грн |
| 100+ | 70.40 грн |
| 500+ | 52.73 грн |