BUK9K17-60EX NEXPERIA
Виробник: NEXPERIA
Description: NEXPERIA - BUK9K17-60EX - Dual-MOSFET, n-Kanal, 60 V, 60 V, 26 A, 26 A, 0.0124 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 26A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 26A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0124ohm
Verlustleistung, p-Kanal: 53W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0124ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 53W
Betriebstemperatur, max.: 175°C
SVHC: Lead (25-Jun-2025)
| Кількість | Ціна |
|---|---|
| 100+ | 90.20 грн |
| 200+ | 66.41 грн |
| 500+ | 47.22 грн |
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Технічний опис BUK9K17-60EX NEXPERIA
Description: NEXPERIA - BUK9K17-60EX - Dual-MOSFET, n-Kanal, 60 V, 60 V, 26 A, 26 A, 0.0124 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 26A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 60V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 26A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0124ohm, Verlustleistung, p-Kanal: 53W, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: LFPAK56D, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0124ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 53W, Betriebstemperatur, max.: 175°C, SVHC: Lead (25-Jun-2025).
Інші пропозиції BUK9K17-60EX за ціною від 31.48 грн до 176.38 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BUK9K17-60EX | Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 26A LFPAK56DPackaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 26A Input Capacitance (Ciss) (Max) @ Vds: 2223pF @ 25V Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Part Status: Active Grade: Automotive Qualification: AEC-Q100 |
на замовлення 1089 шт: термін постачання 21-31 дні (днів) |
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BUK9K17-60EX | Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
на замовлення 1083 шт: термін постачання 21-30 дні (днів) |
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BUK9K17-60EX | NEXPERIA |
Description: NEXPERIA - BUK9K17-60EX - Dual-MOSFET, n-Kanal, 60 V, 60 V, 26 A, 26 A, 0.0124 ohmtariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 26A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 26A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0124ohm Verlustleistung, p-Kanal: 53W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0124ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 53W Betriebstemperatur, max.: 175°C SVHC: Lead (25-Jun-2025) |
на замовлення 1475 шт: термін постачання 21-31 дні (днів) |
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| BUK9K17-60EX |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 26A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 2223pF @ 25V
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
Description: MOSFET 2N-CH 60V 26A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 26A
Input Capacitance (Ciss) (Max) @ Vds: 2223pF @ 25V
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
на замовлення 1089 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 105.62 грн |
| 10+ | 64.39 грн |
| 100+ | 42.85 грн |
| 500+ | 31.52 грн |
| BUK9K17-60EX |
![]() |
Виробник: Nexperia
MOSFETs The factory is currently not accepting orders for this product.
MOSFETs The factory is currently not accepting orders for this product.
на замовлення 1083 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 135.31 грн |
| 10+ | 81.77 грн |
| 100+ | 46.87 грн |
| 500+ | 36.80 грн |
| 1000+ | 31.48 грн |
| BUK9K17-60EX |
![]() |
Виробник: NEXPERIA
Description: NEXPERIA - BUK9K17-60EX - Dual-MOSFET, n-Kanal, 60 V, 60 V, 26 A, 26 A, 0.0124 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 26A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 26A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0124ohm
Verlustleistung, p-Kanal: 53W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0124ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 53W
Betriebstemperatur, max.: 175°C
SVHC: Lead (25-Jun-2025)
Description: NEXPERIA - BUK9K17-60EX - Dual-MOSFET, n-Kanal, 60 V, 60 V, 26 A, 26 A, 0.0124 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 26A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 26A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0124ohm
Verlustleistung, p-Kanal: 53W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0124ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 53W
Betriebstemperatur, max.: 175°C
SVHC: Lead (25-Jun-2025)
на замовлення 1475 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 176.38 грн |
| 10+ | 109.53 грн |
| 50+ | 90.20 грн |
| 200+ | 66.41 грн |
| 500+ | 47.22 грн |




