BUK9K35-60E,115 NEXPERIA
Виробник: NEXPERIA
Description: NEXPERIA - BUK9K35-60E,115 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 22 A, 22 A, 0.032 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 22A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 22A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 38W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchMOS Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 38W
Betriebstemperatur, max.: 175°C
SVHC: Lead (25-Jun-2025)
| Кількість | Ціна |
|---|---|
| 100+ | 62.66 грн |
| 500+ | 47.04 грн |
| 1000+ | 31.69 грн |
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Технічний опис BUK9K35-60E,115 NEXPERIA
Description: NEXPERIA - BUK9K35-60E,115 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 22 A, 22 A, 0.032 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 22A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 60V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 22A, Drain-Source-Durchgangswiderstand, p-Kanal: -, Verlustleistung, p-Kanal: 38W, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: LFPAK56D, Anzahl der Pins: 8Pin(s), Produktpalette: TrenchMOS Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 38W, Betriebstemperatur, max.: 175°C, SVHC: Lead (25-Jun-2025).
Інші пропозиції BUK9K35-60E,115 за ціною від 26.16 грн до 154.64 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BUK9K35-60E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 22A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 1454 шт: термін постачання 21-31 дні (днів) |
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BUK9K35-60E,115 | Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
на замовлення 1224 шт: термін постачання 21-30 дні (днів) |
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BUK9K35-60E,115 | NEXPERIA |
Description: NEXPERIA - BUK9K35-60E,115 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 22 A, 22 A, 0.032 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 22A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 22A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 38W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: TrenchMOS Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 38W Betriebstemperatur, max.: 175°C SVHC: Lead (25-Jun-2025) |
на замовлення 2999 шт: термін постачання 21-31 дні (днів) |
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BUK9K35-60E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 22A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 38W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 22A Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 1454 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 1454 шт В кошику од. на суму грн. |
| BUK9K35-60E,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 22A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 22A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1454 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 91.64 грн |
| 10+ | 55.72 грн |
| 100+ | 36.80 грн |
| 500+ | 26.92 грн |
| BUK9K35-60E,115 |
|
Виробник: Nexperia
MOSFETs The factory is currently not accepting orders for this product.
MOSFETs The factory is currently not accepting orders for this product.
на замовлення 1224 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 111.95 грн |
| 10+ | 68.04 грн |
| 100+ | 38.94 грн |
| 500+ | 30.65 грн |
| 1000+ | 26.16 грн |
| BUK9K35-60E,115 |
|
Виробник: NEXPERIA
Description: NEXPERIA - BUK9K35-60E,115 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 22 A, 22 A, 0.032 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 22A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 22A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 38W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchMOS Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 38W
Betriebstemperatur, max.: 175°C
SVHC: Lead (25-Jun-2025)
Description: NEXPERIA - BUK9K35-60E,115 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 22 A, 22 A, 0.032 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 22A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 22A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 38W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: TrenchMOS Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.032ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 38W
Betriebstemperatur, max.: 175°C
SVHC: Lead (25-Jun-2025)
на замовлення 2999 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 154.64 грн |
| 10+ | 91.01 грн |
| 100+ | 62.66 грн |
| 500+ | 47.04 грн |
| 1000+ | 31.69 грн |
| BUK9K35-60E,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 60V 22A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 22A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 38W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 22A
Input Capacitance (Ciss) (Max) @ Vds: 1081pF @ 25V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 14.2nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 1454 шт:
термін постачання 21-31 дні (днів)