BUK9K45-100E,115 Nexperia
| Кількість | Ціна |
|---|---|
| 27+ | 28.41 грн |
| 28+ | 27.24 грн |
| 29+ | 26.97 грн |
| 100+ | 24.76 грн |
| 250+ | 20.91 грн |
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Технічний опис BUK9K45-100E,115 Nexperia
Description: MOSFET 2N-CH 100V 21A LFPAK56D, Qualification: AEC-Q101, Grade: Automotive, Part Status: Active, Supplier Device Package: LFPAK56D, Vgs(th) (Max) @ Id: 2.1V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V, Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V, Current - Continuous Drain (Id) @ 25°C: 21A, Drain to Source Voltage (Vdss): 100V, Power - Max: 53W, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: SOT-1205, 8-LFPAK56, Packaging: Tape & Reel (TR).
Інші пропозиції BUK9K45-100E,115 за ціною від 30.65 грн до 131.28 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BUK9K45-100E,115 | Nexperia USA Inc. |
 Description: MOSFET 2N-CH 100V 21A LFPAK56DQualification: AEC-Q101 Grade: Automotive Part Status: Active Supplier Device Package: LFPAK56D Vgs(th) (Max) @ Id: 2.1V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Current - Continuous Drain (Id) @ 25°C: 21A Drain to Source Voltage (Vdss): 100V Power - Max: 53W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: SOT-1205, 8-LFPAK56 Packaging: Tape & Reel (TR) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BUK9K45-100E,115 | Nexperia USA Inc. |
Description: MOSFET 2N-CH 100V 21A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 53W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 21A Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 2984 шт: термін постачання 21-31 дні (днів) |
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BUK9K45-100E,115 | NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 15A Pulsed drain current: 83A Power dissipation: 53W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 124mΩ Mounting: SMD Gate charge: 33.5nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
на замовлення 1066 шт: термін постачання 14-30 дні (днів) |
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BUK9K45-100E,115 | Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
на замовлення 67 шт: термін постачання 21-30 дні (днів) |
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BUK9K45-100E,115 | Nexperia |
Trans MOSFET N-CH 100V 21A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
на замовлення 349 шт: термін постачання 21-31 дні (днів) |
Мінімальне замовлення: 23 шт В кошику од. на суму грн. |
| BUK9K45-100E,115 |
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Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 21A
Drain to Source Voltage (Vdss): 100V
Power - Max: 53W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: LFPAK56D
Vgs(th) (Max) @ Id: 2.1V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 21A
Drain to Source Voltage (Vdss): 100V
Power - Max: 53W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-1205, 8-LFPAK56
Packaging: Tape & Reel (TR)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 35.11 грн |
| BUK9K45-100E,115 |
|
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 100V 21A LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 53W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 21A
Input Capacitance (Ciss) (Max) @ Vds: 2152pF @ 25V
Rds On (Max) @ Id, Vgs: 42mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
на замовлення 2984 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 58.25 грн |
| 10+ | 42.40 грн |
| 100+ | 39.02 грн |
| BUK9K45-100E,115 |
|
Виробник: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 83A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 15A; Idm: 83A; 53W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 83A
Power dissipation: 53W
Case: LFPAK33; SOT1210
Gate-source voltage: ±10V
On-state resistance: 124mΩ
Mounting: SMD
Gate charge: 33.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
на замовлення 1066 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 80.54 грн |
| 10+ | 67.31 грн |
| 25+ | 63.98 грн |
| 100+ | 61.49 грн |
| 250+ | 59.83 грн |
| BUK9K45-100E,115 |
|
Виробник: Nexperia
MOSFETs The factory is currently not accepting orders for this product.
MOSFETs The factory is currently not accepting orders for this product.
на замовлення 67 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 131.28 грн |
| 10+ | 80.18 грн |
| 100+ | 45.56 грн |
| 500+ | 35.83 грн |
| 1000+ | 30.65 грн |
| BUK9K45-100E,115 |
|
Виробник: Nexperia
Trans MOSFET N-CH 100V 21A 8-Pin LFPAK-D T/R Automotive AEC-Q101
Trans MOSFET N-CH 100V 21A 8-Pin LFPAK-D T/R Automotive AEC-Q101
на замовлення 349 шт:
термін постачання 21-31 дні (днів)