BUK9K52-60RAX NEXPERIA
Виробник: NEXPERIA
Description: NEXPERIA - BUK9K52-60RAX - Dual-MOSFET, n-Kanal, 60 V, 60 V, 16 A, 16 A, 0.0414 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 60V
rohsCompliant: YES
Dauer-Drainstrom Id: 16A
Dauer-Drainstrom Id, p-Kanal: 16A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
Drain-Source-Spannung Vds, p-Kanal: 60V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 16A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.0414ohm
Verlustleistung, p-Kanal: 32W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: LFPAK56D
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.0414ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 32W
Betriebstemperatur, max.: 175°C
SVHC: Lead (21-Jan-2025)
| Кількість | Ціна |
|---|---|
| 100+ | 28.90 грн |
| 500+ | 26.76 грн |
| 1000+ | 24.63 грн |
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Технічний опис BUK9K52-60RAX NEXPERIA
Description: NEXPERIA - BUK9K52-60RAX - Dual-MOSFET, n-Kanal, 60 V, 60 V, 16 A, 16 A, 0.0414 ohm, tariffCode: 85412900, Drain-Source-Spannung Vds: 60V, rohsCompliant: YES, Dauer-Drainstrom Id: 16A, Dauer-Drainstrom Id, p-Kanal: 16A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, Drain-Source-Spannung Vds, p-Kanal: 60V, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 16A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.0414ohm, Verlustleistung, p-Kanal: 32W, Drain-Source-Spannung Vds, n-Kanal: 60V, euEccn: NLR, Bauform - Transistor: LFPAK56D, Anzahl der Pins: 8Pin(s), Produktpalette: -, Drain-Source-Durchgangswiderstand, n-Kanal: 0.0414ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 32W, Betriebstemperatur, max.: 175°C, SVHC: Lead (21-Jan-2025).
Інші пропозиції BUK9K52-60RAX за ціною від 23.04 грн до 127.09 грн
| Фото | Назва | Виробник | Інформація |
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BUK9K52-60RAX | Виробник : NEXPERIA |
Description: NEXPERIA - BUK9K52-60RAX - Dual-MOSFET, n-Kanal, 60 V, 60 V, 16 A, 16 A, 0.0414 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 16A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 16A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0414ohm Verlustleistung, p-Kanal: 32W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: LFPAK56D Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0414ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 32W Betriebstemperatur, max.: 175°C SVHC: Lead (21-Jan-2025) |
на замовлення 1444 шт: термін постачання 21-31 дні (днів) |
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BUK9K52-60RAX | Виробник : Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 16A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q101 |
на замовлення 132 шт: термін постачання 21-31 дні (днів) |
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BUK9K52-60RAX | Виробник : Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
на замовлення 137 шт: термін постачання 21-30 дні (днів) |
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BUK9K52-60RAX | Виробник : Nexperia |
Trans MOSFET N-CH 60V 16A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
товару немає в наявності |
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BUK9K52-60RAX | Виробник : Nexperia USA Inc. |
Description: MOSFET 2N-CH 60V 16A LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32W (Ta) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 16A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 725pF @ 25V Rds On (Max) @ Id, Vgs: 49mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |
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| BUK9K52-60RAX | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 11A; Idm: 64A; 32W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 11A Pulsed drain current: 64A Power dissipation: 32W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 124mΩ Mounting: SMD Gate charge: 5.6nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |