BUK9K61-100LX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: BUK9K61-100L/SOT1205/LFPAK56D
Packaging: Cut Tape (CT)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 32W (Tc)
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V
Rds On (Max) @ Id, Vgs: 60.1mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.05V @ 30µA
Supplier Device Package: LFPAK56D
Grade: Automotive
Qualification: AEC-Q101
на замовлення 250 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 3+ | 116.76 грн |
| 10+ | 70.81 грн |
| 50+ | 52.80 грн |
| 100+ | 44.09 грн |
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Технічний опис BUK9K61-100LX Nexperia USA Inc.
Description: BUK9K61-100L/SOT1205/LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 32W (Tc), Drain to Source Voltage (Vdss): 100V, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V, Rds On (Max) @ Id, Vgs: 60.1mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.05V @ 30µA, Supplier Device Package: LFPAK56D, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK9K61-100LX за ціною від 25.26 грн до 116.99 грн
| Фото | Назва | Виробник | Інформація |
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BUK9K61-100LX | Виробник : Nexperia |
MOSFETs BUK9K61-100L/SOT1205/LFPAK56D |
на замовлення 1050 шт: термін постачання 21-30 дні (днів) |
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BUK9K61-100LX | Виробник : Nexperia USA Inc. |
Description: BUK9K61-100L/SOT1205/LFPAK56D Packaging: Tape & Reel (TR) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 32W (Tc) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1012pF @ 25V Rds On (Max) @ Id, Vgs: 60.1mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17.7nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.05V @ 30µA Supplier Device Package: LFPAK56D Grade: Automotive Qualification: AEC-Q101 |
товару немає в наявності |