BUK9K6R2-40E,115 Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 40A LFPAK56D
Packaging: Tape & Reel (TR)
Package / Case: SOT-1205, 8-LFPAK56
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 68W
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 40A
Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V
Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V
Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK56D
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 1500+ | 52.98 грн |
| 3000+ | 50.60 грн |
Відгуки про товар
Написати відгук
Технічний опис BUK9K6R2-40E,115 Nexperia USA Inc.
Description: MOSFET 2N-CH 40V 40A LFPAK56D, Packaging: Tape & Reel (TR), Package / Case: SOT-1205, 8-LFPAK56, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 68W, Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 40A, Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V, Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V, Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK56D, Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Інші пропозиції BUK9K6R2-40E,115 за ціною від 43.57 грн до 152.18 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
BUK9K6R2-40E,115 | Виробник : Nexperia USA Inc. |
Description: MOSFET 2N-CH 40V 40A LFPAK56D Packaging: Cut Tape (CT) Package / Case: SOT-1205, 8-LFPAK56 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 68W Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 40A Input Capacitance (Ciss) (Max) @ Vds: 3281pF @ 25V Rds On (Max) @ Id, Vgs: 6mOhm @ 25A, 10V Gate Charge (Qg) (Max) @ Vgs: 35.4nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK56D Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
на замовлення 5297 шт: термін постачання 21-31 дні (днів) |
|
||||||||||
 |
BUK9K6R2-40E,115 | Виробник : Nexperia |
MOSFETs The factory is currently not accepting orders for this product. |
на замовлення 909 шт: термін постачання 21-30 дні (днів) |
|
||||||||||
 |
BUK9K6R2-40E,115 | Виробник : Nexperia |
Trans MOSFET N-CH 40V 40A 8-Pin LFPAK-D T/R Automotive AEC-Q101 |
товару немає в наявності |
|||||||||||
| BUK9K6R2-40E,115 | Виробник : NEXPERIA |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; Idm: 295A; 68W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 295A Power dissipation: 68W Case: LFPAK56D; SOT1205 Gate-source voltage: ±10V On-state resistance: 6mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
товару немає в наявності |