BUK9M10-30EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 30V 54A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1249 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 54A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1249 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 458 шт:
термін постачання 21-31 дні (днів)
Кількість | Ціна без ПДВ |
---|---|
6+ | 56.77 грн |
10+ | 47.81 грн |
100+ | 33.07 грн |
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Технічний опис BUK9M10-30EX Nexperia USA Inc.
Description: MOSFET N-CH 30V 54A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 54A (Tc), Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V, Power Dissipation (Max): 55W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1249 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK9M10-30EX за ціною від 17.6 грн до 57.66 грн
Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ | ||||||||||||||||
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BUK9M10-30EX | Виробник : Nexperia | MOSFET BUK9M10-30E/SOT1210/mLFPAK |
на замовлення 5770 шт: термін постачання 21-30 дні (днів) |
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BUK9M10-30EX | Виробник : NEXPERIA | Trans MOSFET N-CH 30V 54A Automotive 8-Pin LFPAK EP T/R |
товар відсутній |
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BUK9M10-30EX | Виробник : Nexperia | Trans MOSFET N-CH 30V 54A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
товар відсутній |
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BUK9M10-30EX | Виробник : Nexperia | Trans MOSFET N-CH 30V 54A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
товар відсутній |
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BUK9M10-30EX | Виробник : Nexperia | Trans MOSFET N-CH 30V 54A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
товар відсутній |
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BUK9M10-30EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 38A Pulsed drain current: 216A Power dissipation: 55W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 18.7mΩ Mounting: SMD Gate charge: 12.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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BUK9M10-30EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 54A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 7.8mOhm @ 15A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12.2 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1249 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
товар відсутній |
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BUK9M10-30EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 38A; Idm: 216A; 55W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 38A Pulsed drain current: 216A Power dissipation: 55W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 18.7mΩ Mounting: SMD Gate charge: 12.2nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |