BUK9M11-40EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.Description: MOSFET N-CH 40V 53A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 53A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1500+ | 23.64 грн |
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Технічний опис BUK9M11-40EX Nexperia USA Inc.
Description: MOSFET N-CH 40V 53A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V, Power Dissipation (Max): 62W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK9M11-40EX за ціною від 17.83 грн до 58.65 грн
| Фото | Назва | Виробник | Інформація |
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BUK9M11-40EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 40V 53A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 15A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 13.4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1721 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 2976 шт: термін постачання 21-31 дні (днів) |
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BUK9M11-40EX | Виробник : Nexperia |
MOSFET BUK9M11-40E/SOT1210/mLFPAK |
на замовлення 2995 шт: термін постачання 21-30 дні (днів) |
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BUK9M11-40EX | Виробник : NEXPERIA |
Trans MOSFET N-CH 40V 53A Automotive 8-Pin LFPAK EP T/R |
товар відсутній |
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BUK9M11-40EX | Виробник : Nexperia |
Trans MOSFET N-CH 40V 53A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
товар відсутній |
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BUK9M11-40EX | Виробник : Nexperia |
Trans MOSFET N-CH 40V 53A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
товар відсутній |
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| BUK9M11-40EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 37A Pulsed drain current: 211A Power dissipation: 62W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 22mΩ Mounting: SMD Gate charge: 13.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
товар відсутній |
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| BUK9M11-40EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 37A; Idm: 211A; 62W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 37A Pulsed drain current: 211A Power dissipation: 62W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 22mΩ Mounting: SMD Gate charge: 13.4nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |