BUK9M24-40EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 30A LFPAK33
Packaging: Tape & Reel (TR)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
| Кількість | Ціна |
|---|---|
| 1500+ | 15.20 грн |
| 3000+ | 13.33 грн |
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Технічний опис BUK9M24-40EX Nexperia USA Inc.
Description: MOSFET N-CH 40V 30A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V, Power Dissipation (Max): 44W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 25 V, Grade: Automotive, Qualification: AEC-Q101.
Інші пропозиції BUK9M24-40EX за ціною від 16.17 грн до 58.13 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BUK9M24-40EX | NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 121A; 44W Mounting: SMD Case: LFPAK33; SOT1210 Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar Pulsed drain current: 121A Drain-source voltage: 40V Drain current: 30A Gate charge: 7.7nC On-state resistance: 20mΩ Power dissipation: 44W Application: automotive industry |
на замовлення 1465 шт: термін постачання 14-30 дні (днів) |
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BUK9M24-40EX | Nexperia USA Inc. |
Description: MOSFET N-CH 40V 30A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 25 V Grade: Automotive Qualification: AEC-Q101 |
на замовлення 3576 шт: термін постачання 21-31 дні (днів) |
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| BUK9M24-40EX |
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Виробник: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 121A; 44W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: 121A
Drain-source voltage: 40V
Drain current: 30A
Gate charge: 7.7nC
On-state resistance: 20mΩ
Power dissipation: 44W
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 121A; 44W
Mounting: SMD
Case: LFPAK33; SOT1210
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Pulsed drain current: 121A
Drain-source voltage: 40V
Drain current: 30A
Gate charge: 7.7nC
On-state resistance: 20mΩ
Power dissipation: 44W
Application: automotive industry
на замовлення 1465 шт:
термін постачання 14-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 12+ | 39.83 грн |
| 16+ | 27.65 грн |
| 25+ | 25.38 грн |
| 100+ | 21.27 грн |
| 250+ | 19.16 грн |
| 500+ | 17.73 грн |
| 1000+ | 16.98 грн |
| BUK9M24-40EX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 40V 30A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 40V 30A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 7.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 798 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
на замовлення 3576 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 58.13 грн |
| 10+ | 34.87 грн |
| 100+ | 22.56 грн |
| 500+ | 16.17 грн |