BUK9M35-80EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 26A LFPAK33
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 5 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 62W (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
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Технічний опис BUK9M35-80EX Nexperia USA Inc.
Description: MOSFET N-CH 80V 26A LFPAK33, Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 5 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 5V, Part Status: Active, Supplier Device Package: LFPAK33, Vgs(th) (Max) @ Id: 2.1V @ 1mA, Power Dissipation (Max): 62W (Tc), Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V, Current - Continuous Drain (Id) @ 25°C: 26A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Packaging: Tape & Reel (TR).
Інші пропозиції BUK9M35-80EX за ціною від 15.29 грн до 63.79 грн
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BUK9M35-80EX | Nexperia USA Inc. |
Description: MOSFET N-CH 80V 26A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 25 V Qualification: AEC-Q101 |
на замовлення 1626 шт: термін постачання 21-31 дні (днів) |
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BUK9M35-80EX | Nexperia |
MOSFETs N-channel 40 V, 3.3 mΩ logic level MOSFET in LFPAK33 |
на замовлення 6720 шт: термін постачання 21-30 дні (днів) |
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| BUK9M35-80EX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 80V 26A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 26A LFPAK33
Packaging: Cut Tape (CT)
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: LFPAK33
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 13.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1804 pF @ 25 V
Qualification: AEC-Q101
на замовлення 1626 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 61.27 грн |
| 10+ | 41.98 грн |
| 100+ | 28.65 грн |
| 500+ | 24.32 грн |
| BUK9M35-80EX |
|
Виробник: Nexperia
MOSFETs N-channel 40 V, 3.3 mΩ logic level MOSFET in LFPAK33
MOSFETs N-channel 40 V, 3.3 mΩ logic level MOSFET in LFPAK33
на замовлення 6720 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 6+ | 63.79 грн |
| 10+ | 44.97 грн |
| 100+ | 26.67 грн |
| 500+ | 23.46 грн |
| 1000+ | 19.76 грн |
| 1500+ | 16.90 грн |
| 3000+ | 15.29 грн |