BUK9M43-100EX Nexperia USA Inc.
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 25A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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Технічний опис BUK9M43-100EX Nexperia USA Inc.
Description: NEXPERIA - BUK9M43-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 26 A, 0.034 ohm, SOT-1210, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 100V, rohsCompliant: YES, Dauer-Drainstrom Id: 26A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, isCanonical: Y, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.7V, euEccn: NLR, Verlustleistung: 80W, Bauform - Transistor: SOT-1210, Anzahl der Pins: 8Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.034ohm, SVHC: Lead (25-Jun-2025).
Інші пропозиції BUK9M43-100EX за ціною від 18.85 грн до 127.25 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
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BUK9M43-100EX | NEXPERIA |
Description: NEXPERIA - BUK9M43-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 26 A, 0.034 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 26A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 80W Bauform - Transistor: SOT-1210 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.034ohm SVHC: Lead (25-Jun-2025) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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BUK9M43-100EX | Nexperia USA Inc. |
Description: MOSFET N-CH 100V 25A LFPAK33 Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 5 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 5V Part Status: Active Supplier Device Package: LFPAK33 Vgs(th) (Max) @ Id: 2.1V @ 1mA Power Dissipation (Max): 80W (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
на замовлення 4126 шт: термін постачання 21-31 дні (днів) |
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BUK9M43-100EX | Nexperia |
MOSFETs SOT1210 100V 25A |
на замовлення 661 шт: термін постачання 21-30 дні (днів) |
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BUK9M43-100EX | NEXPERIA |
Description: NEXPERIA - BUK9M43-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 26 A, 0.034 ohm, SOT-1210, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 26A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.7V euEccn: NLR Verlustleistung: 80W Bauform - Transistor: SOT-1210 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.034ohm SVHC: Lead (25-Jun-2025) |
на замовлення 1500 шт: термін постачання 21-31 дні (днів) |
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| BUK9M43-100EX |
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Виробник: NEXPERIA
Description: NEXPERIA - BUK9M43-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 26 A, 0.034 ohm, SOT-1210, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 26A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 80W
Bauform - Transistor: SOT-1210
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.034ohm
SVHC: Lead (25-Jun-2025)
Description: NEXPERIA - BUK9M43-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 26 A, 0.034 ohm, SOT-1210, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 26A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: N
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 80W
Bauform - Transistor: SOT-1210
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: No
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.034ohm
SVHC: Lead (25-Jun-2025)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 100+ | 66.28 грн |
| 200+ | 48.84 грн |
| 500+ | 35.14 грн |
| BUK9M43-100EX |
|
Виробник: Nexperia USA Inc.
Description: MOSFET N-CH 100V 25A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 100V 25A LFPAK33
Input Capacitance (Ciss) (Max) @ Vds: 2309 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20.2 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 5V
Part Status: Active
Supplier Device Package: LFPAK33
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-1210, 8-LFPAK33 (5-Lead)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
на замовлення 4126 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 5+ | 76.89 грн |
| 10+ | 52.65 грн |
| 100+ | 35.55 грн |
| 500+ | 26.56 грн |
| BUK9M43-100EX |
|
Виробник: Nexperia
MOSFETs SOT1210 100V 25A
MOSFETs SOT1210 100V 25A
на замовлення 661 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна |
|---|---|
| 4+ | 93.43 грн |
| 10+ | 57.80 грн |
| 100+ | 33.21 грн |
| 500+ | 25.82 грн |
| 1000+ | 22.30 грн |
| 1500+ | 20.37 грн |
| 3000+ | 18.85 грн |
| BUK9M43-100EX |
|
Виробник: NEXPERIA
Description: NEXPERIA - BUK9M43-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 26 A, 0.034 ohm, SOT-1210, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 26A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 80W
Bauform - Transistor: SOT-1210
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.034ohm
SVHC: Lead (25-Jun-2025)
Description: NEXPERIA - BUK9M43-100EX - Leistungs-MOSFET, n-Kanal, 100 V, 26 A, 0.034 ohm, SOT-1210, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: YES
Dauer-Drainstrom Id: 26A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
isCanonical: Y
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.7V
euEccn: NLR
Verlustleistung: 80W
Bauform - Transistor: SOT-1210
Anzahl der Pins: 8Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 0.034ohm
SVHC: Lead (25-Jun-2025)
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 7+ | 127.25 грн |
| 11+ | 79.90 грн |
| 50+ | 66.28 грн |
| 200+ | 48.84 грн |
| 500+ | 35.14 грн |