на замовлення 1463 шт:
термін постачання 21-30 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 6+ | 59.83 грн |
| 10+ | 48.89 грн |
| 100+ | 33.08 грн |
| 500+ | 28.03 грн |
| 1000+ | 22.85 грн |
| 1500+ | 21.52 грн |
| 3000+ | 20.46 грн |
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Технічний опис BUK9M6R6-30EX Nexperia
Description: MOSFET N-CH 30V 70A LFPAK33, Packaging: Tape & Reel (TR), Package / Case: SOT-1210, 8-LFPAK33 (5-Lead), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 70A (Tc), Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V, Power Dissipation (Max): 75W (Tc), Vgs(th) (Max) @ Id: 2.1V @ 1mA, Supplier Device Package: LFPAK33, Grade: Automotive, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2001 pF @ 25 V, Qualification: AEC-Q101.
Інші пропозиції BUK9M6R6-30EX
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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BUK9M6R6-30EX | Виробник : NEXPERIA |
 Trans MOSFET N-CH 30V 70A Automotive 8-Pin LFPAK EP T/R |
товар відсутній |
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BUK9M6R6-30EX | Виробник : Nexperia |
Trans MOSFET N-CH 30V 70A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
товар відсутній |
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BUK9M6R6-30EX | Виробник : Nexperia |
Trans MOSFET N-CH 30V 70A Automotive AEC-Q101 8-Pin LFPAK EP T/R |
товар відсутній |
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| BUK9M6R6-30EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 54.7A; Idm: 309A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 54.7A Pulsed drain current: 309A Power dissipation: 75W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 13mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry кількість в упаковці: 1 шт |
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BUK9M6R6-30EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 70A LFPAK33 Packaging: Tape & Reel (TR) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2001 pF @ 25 V Qualification: AEC-Q101 |
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BUK9M6R6-30EX | Виробник : Nexperia USA Inc. |
Description: MOSFET N-CH 30V 70A LFPAK33 Packaging: Cut Tape (CT) Package / Case: SOT-1210, 8-LFPAK33 (5-Lead) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 70A (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 20A, 10V Power Dissipation (Max): 75W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 1mA Supplier Device Package: LFPAK33 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 2001 pF @ 25 V Qualification: AEC-Q101 |
товар відсутній |
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| BUK9M6R6-30EX | Виробник : NEXPERIA |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 54.7A; Idm: 309A; 75W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 54.7A Pulsed drain current: 309A Power dissipation: 75W Case: LFPAK33; SOT1210 Gate-source voltage: ±10V On-state resistance: 13mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
товар відсутній |